An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language

An-Sam Peng, Lin-Kun Wu. An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language. IEICE Transactions, 100-C(5):424-429, 2017. [doi]

Abstract

Abstract is missing.