Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures - researchr publication authors

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Zhaoyang Peng, Yiyu Wang, Huajun Shen, Chengzhan Li, Jia Wu, Yun Bai, Kean Liu, Xinyu Liu. Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures. Microelectronics Reliability, 58:192-196, 2016. [doi]

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