Zhaoyang Peng, Yiyu Wang, Huajun Shen, Chengzhan Li, Jia Wu, Yun Bai, Kean Liu, Xinyu Liu. Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures. Microelectronics Reliability, 58:192-196, 2016. [doi]
@article{PengWSLWBLL16,
title = {Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures},
author = {Zhaoyang Peng and Yiyu Wang and Huajun Shen and Chengzhan Li and Jia Wu and Yun Bai and Kean Liu and Xinyu Liu},
year = {2016},
doi = {10.1016/j.microrel.2015.11.022},
url = {http://dx.doi.org/10.1016/j.microrel.2015.11.022},
researchr = {https://researchr.org/publication/PengWSLWBLL16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {58},
pages = {192-196},
}