Temperature behavior and modeling of ohmic contacts to Si:::+::: implanted n-type GaN

A. Pérez-Tomás, M. Placidi, A. Fontserè, P. M. Gammon, M. R. Jennings. Temperature behavior and modeling of ohmic contacts to Si:::+::: implanted n-type GaN. Microelectronics Reliability, 51(8):1325-1329, 2011. [doi]

Abstract

Abstract is missing.