V. S. Pershenkov, M. Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez. Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses. Microelectronics Reliability, 54(11):2360-2363, 2014. [doi]
Abstract is missing.