Nathabhat Phankong, Tsuyoshi Funaki, Takashi Hikihara. Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances. IEICE Electronic Express, 7(14):1051-1057, 2010. [doi]
@article{PhankongFH10a,
title = {Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances},
author = {Nathabhat Phankong and Tsuyoshi Funaki and Takashi Hikihara},
year = {2010},
doi = {10.1587/elex.7.1051},
url = {http://dx.doi.org/10.1587/elex.7.1051},
researchr = {https://researchr.org/publication/PhankongFH10a},
cites = {0},
citedby = {0},
journal = {IEICE Electronic Express},
volume = {7},
number = {14},
pages = {1051-1057},
}