Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO::2:: thin oxides stressed to hard breakdown

D. Pic, D. Goguenheim, Jean-Luc Ogier. Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO::2:: thin oxides stressed to hard breakdown. Microelectronics Reliability, 48(3):335-341, 2008. [doi]

Authors

D. Pic

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D. Goguenheim

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Jean-Luc Ogier

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