Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO::2:: thin oxides stressed to hard breakdown

D. Pic, D. Goguenheim, Jean-Luc Ogier. Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO::2:: thin oxides stressed to hard breakdown. Microelectronics Reliability, 48(3):335-341, 2008. [doi]

Abstract

Abstract is missing.