Mario Pinto-Guedes, Philip C. Chan. A circuit simulation model for bipolar-induced breakdown in MOSFET. IEEE Trans. on CAD of Integrated Circuits and Systems, 7(2):289-294, 1988. [doi]
@article{Pinto-GuedesC88,
title = {A circuit simulation model for bipolar-induced breakdown in MOSFET},
author = {Mario Pinto-Guedes and Philip C. Chan},
year = {1988},
doi = {10.1109/43.3159},
url = {http://doi.ieeecomputersociety.org/10.1109/43.3159},
tags = {C++},
researchr = {https://researchr.org/publication/Pinto-GuedesC88},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
volume = {7},
number = {2},
pages = {289-294},
}