Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation

B. S. Poling, G. D. Via, K. D. Bole, E. E. Johnson, J. M. McDermott. Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation. Microelectronics Reliability, 68:13-20, 2017. [doi]

@article{PolingVBJM17,
  title = {Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation},
  author = {B. S. Poling and G. D. Via and K. D. Bole and E. E. Johnson and J. M. McDermott},
  year = {2017},
  doi = {10.1016/j.microrel.2016.09.017},
  url = {http://dx.doi.org/10.1016/j.microrel.2016.09.017},
  researchr = {https://researchr.org/publication/PolingVBJM17},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {68},
  pages = {13-20},
}