On the dependence of FET noise model parameters on ambient temperature

Marian W. Pospieszalski. On the dependence of FET noise model parameters on ambient temperature. In 2017 IEEE Radio and Wireless Symposium, RWS 2017, Phoenix, AZ, USA, January 15-18, 2017. pages 159-161, IEEE, 2017. [doi]

Abstract

Abstract is missing.