Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness

Om Prakash 0007, Kai Ni 0004, Hussam Amrouch. Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-4, IEEE, 2023. [doi]

@inproceedings{PrakashNA23,
  title = {Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness},
  author = {Om Prakash 0007 and Kai Ni 0004 and Hussam Amrouch},
  year = {2023},
  doi = {10.1109/IRPS48203.2023.10118286},
  url = {https://doi.org/10.1109/IRPS48203.2023.10118286},
  researchr = {https://researchr.org/publication/PrakashNA23},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-5672-2},
}