Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS

Francesco Maria Puglisi, P. Pavan, Luca Larcher, Andrea Padovani. Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 246-249, IEEE, 2014. [doi]

@inproceedings{PuglisiPLP14,
  title = {Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS},
  author = {Francesco Maria Puglisi and P. Pavan and Luca Larcher and Andrea Padovani},
  year = {2014},
  doi = {10.1109/ESSDERC.2014.6948806},
  url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948806},
  researchr = {https://researchr.org/publication/PuglisiPLP14},
  cites = {0},
  citedby = {0},
  pages = {246-249},
  booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-4378-4},
}