Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS - researchr publication authors

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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher. Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 166-169, IEEE, 2013. [doi]

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