Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher. Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 166-169, IEEE, 2013. [doi]
@inproceedings{PuglisiPPL13,
title = {Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS},
author = {Francesco Maria Puglisi and Paolo Pavan and Andrea Padovani and Luca Larcher},
year = {2013},
doi = {10.1109/ESSDERC.2013.6818845},
url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818845},
researchr = {https://researchr.org/publication/PuglisiPPL13},
cites = {0},
citedby = {0},
pages = {166-169},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
publisher = {IEEE},
}