Random Telegraph Signal noise properties of HfOx RRAM in high resistive state

Francesco M. Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker. Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 274-277, IEEE, 2012. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.