A 512kb 8T SRAM Macro Operating Down to 0.57 V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45 nm SOI CMOS

Masood Qazi, Kevin Stawiasz, Leland Chang, Anantha P. Chandrakasan. A 512kb 8T SRAM Macro Operating Down to 0.57 V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45 nm SOI CMOS. J. Solid-State Circuits, 46(1):85-96, 2011. [doi]

@article{QaziSCC11,
  title = {A 512kb 8T SRAM Macro Operating Down to 0.57 V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45 nm SOI CMOS},
  author = {Masood Qazi and Kevin Stawiasz and Leland Chang and Anantha P. Chandrakasan},
  year = {2011},
  doi = {10.1109/JSSC.2010.2085970},
  url = {http://dx.doi.org/10.1109/JSSC.2010.2085970},
  researchr = {https://researchr.org/publication/QaziSCC11},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {46},
  number = {1},
  pages = {85-96},
}