Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET - researchr publication authors

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Yijun Qian, Yuan Gao, Amit Kumar Shukla, Tao Wu, Xing Wei, Kai Lu, Yumeng Yang. Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET. In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021, Zhuhai, China, November 24-26, 2021. pages 239-240, IEEE, 2021. [doi]

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