Yijun Qian, Yuan Gao, Amit Kumar Shukla, Tao Wu, Xing Wei, Kai Lu, Yumeng Yang. Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET. In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021, Zhuhai, China, November 24-26, 2021. pages 239-240, IEEE, 2021. [doi]
@inproceedings{QianGSWWLY21,
title = {Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET},
author = {Yijun Qian and Yuan Gao and Amit Kumar Shukla and Tao Wu and Xing Wei and Kai Lu and Yumeng Yang},
year = {2021},
doi = {10.1109/ICTA53157.2021.9661921},
url = {https://doi.org/10.1109/ICTA53157.2021.9661921},
researchr = {https://researchr.org/publication/QianGSWWLY21},
cites = {0},
citedby = {0},
pages = {239-240},
booktitle = {2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021, Zhuhai, China, November 24-26, 2021},
publisher = {IEEE},
isbn = {978-1-6654-1747-1},
}