Qinsong Qian, Weifeng Sun, Jing Zhu, Longxing Shi. Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions. In Microelectronics Reliability. pages 1935-1941, 2010. [doi]
@inproceedings{QianSZS10,
title = {Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions},
author = {Qinsong Qian and Weifeng Sun and Jing Zhu and Longxing Shi},
year = {2010},
doi = {10.1016/j.microrel.2010.05.010},
url = {http://dx.doi.org/10.1016/j.microrel.2010.05.010},
researchr = {https://researchr.org/publication/QianSZS10},
cites = {0},
citedby = {0},
pages = {1935-1941},
booktitle = {Microelectronics Reliability},
}