Hot Carrier Injection Induced Degradation of 14 nm FinFET under High Source-Drain Voltage Bias - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Junru Qu, Jiabao Ye, Zhangbin Yang, Daixiao Peng, Xi Cai, Xueguang Lian, Yong Ding, Bing Chen. Hot Carrier Injection Induced Degradation of 14 nm FinFET under High Source-Drain Voltage Bias. In IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024, Hangzhou, China, October 25-27, 2024. pages 176-177, IEEE, 2024. [doi]

This author has not been identified. Look up 'Junru Qu' in GoogleThis author has not been identified. Look up 'Jiabao Ye' in GoogleThis author has not been identified. Look up 'Zhangbin Yang' in GoogleThis author has not been identified. Look up 'Daixiao Peng' in GoogleThis author has not been identified. Look up 'Xi Cai' in GoogleThis author has not been identified. Look up 'Xueguang Lian' in GoogleThis author has not been identified. Look up 'Yong Ding' in GoogleThis author has not been identified. Look up 'Bing Chen' in Google

runs on WebDSL