Junru Qu, Jiabao Ye, Zhangbin Yang, Daixiao Peng, Xi Cai, Xueguang Lian, Yong Ding, Bing Chen. Hot Carrier Injection Induced Degradation of 14 nm FinFET under High Source-Drain Voltage Bias. In IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024, Hangzhou, China, October 25-27, 2024. pages 176-177, IEEE, 2024. [doi]
Abstract is missing.