2 automatic back-biasing compensation unit achieving 50% leakage reduction in FDSOI 28nm over 0.35-to-1V VDD range

Anthony Quelen, Gaël Pillonnet, Philippe Flatresse, Edith Beigné. 2 automatic back-biasing compensation unit achieving 50% leakage reduction in FDSOI 28nm over 0.35-to-1V VDD range. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 304-306, IEEE, 2018. [doi]

@inproceedings{QuelenPFB18,
  title = {2 automatic back-biasing compensation unit achieving 50% leakage reduction in FDSOI 28nm over 0.35-to-1V VDD range},
  author = {Anthony Quelen and Gaël Pillonnet and Philippe Flatresse and Edith Beigné},
  year = {2018},
  doi = {10.1109/ISSCC.2018.8310305},
  url = {https://doi.org/10.1109/ISSCC.2018.8310305},
  researchr = {https://researchr.org/publication/QuelenPFB18},
  cites = {0},
  citedby = {0},
  pages = {304-306},
  booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
  publisher = {IEEE},
  isbn = {978-1-5090-4940-0},
}