Exploiting drain-erase scheme in ferroelectric FETs for logic-in-memory

Musaib Rafiq, Yogesh Singh Chauhan, Shubham Sahay. Exploiting drain-erase scheme in ferroelectric FETs for logic-in-memory. Neuromorph. Comput. Eng., 5(2):24007, 2025. [doi]

Authors

Musaib Rafiq

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Yogesh Singh Chauhan

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Shubham Sahay

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