Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range

P. Vigneshwara Raja, Neti V. L. Narasimha Murty. Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range. Microelectronics Reliability, 87:213-221, 2018. [doi]

Abstract

Abstract is missing.