Compute-in-eDRAM with Backend Integrated Indium Gallium Zinc Oxide Transistors

Siddhartha Raman Sundara Raman, Shanshan Xie, Jaydeep P. Kulkarni. Compute-in-eDRAM with Backend Integrated Indium Gallium Zinc Oxide Transistors. In IEEE International Symposium on Circuits and Systems, ISCAS 2021, Daegu, South Korea, May 22-28, 2021. pages 1-5, IEEE, 2021. [doi]

Authors

Siddhartha Raman Sundara Raman

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Shanshan Xie

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Jaydeep P. Kulkarni

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