Luminescent Silicon Oxycarbide Thin Films via Hot-wire CVD using Tetraethyl Orthosilicate: Role of the Chamber Pressure and Post-deposition Annealing

J. R. Ramos-Serrano, Y. Matsumoto, C. Morales. Luminescent Silicon Oxycarbide Thin Films via Hot-wire CVD using Tetraethyl Orthosilicate: Role of the Chamber Pressure and Post-deposition Annealing. In 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018, Mexico City, Mexico, September 5-7, 2018. pages 1-4, IEEE, 2018. [doi]

@inproceedings{Ramos-SerranoMM18,
  title = {Luminescent Silicon Oxycarbide Thin Films via Hot-wire CVD using Tetraethyl Orthosilicate: Role of the Chamber Pressure and Post-deposition Annealing},
  author = {J. R. Ramos-Serrano and Y. Matsumoto and C. Morales},
  year = {2018},
  doi = {10.1109/ICEEE.2018.8533970},
  url = {https://doi.org/10.1109/ICEEE.2018.8533970},
  researchr = {https://researchr.org/publication/Ramos-SerranoMM18},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018, Mexico City, Mexico, September 5-7, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-7033-0},
}