Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen. Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. In IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, CA, USA, May 21-25, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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