Effect of 6.5 MeV proton irradiation on the performance of 4H-SiC Schottky barrier photodiode

Farhood Rasouli, Zahra Hemmat, Sina Haji Alizad. Effect of 6.5 MeV proton irradiation on the performance of 4H-SiC Schottky barrier photodiode. In IEEE International Conference on Electro/Information Technology, EIT 2015, Dekalb, IL, USA, May 21-23, 2015. pages 432-435, IEEE, 2015. [doi]

Abstract

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