Performance study of strained III-V materials for ultra-thin body transistor applications

Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro. Performance study of strained III-V materials for ultra-thin body transistor applications. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 184-187, IEEE, 2016. [doi]

@inproceedings{RauMCEGGKLOPRSS16,
  title = {Performance study of strained III-V materials for ultra-thin body transistor applications},
  author = {Martin Rau and Troels Markussen and Enrico Caruso and David Esseni and Elena Gnani and Antonio Gnudi and Petr A. Khomyakov and Mathieu Luisier and Patrik Osgnach and Pierpaolo Palestri and Susanna Reggiani and Andreas Schenk and Luca Selmi and Kurt Stokbro},
  year = {2016},
  doi = {10.1109/ESSDERC.2016.7599617},
  url = {http://dx.doi.org/10.1109/ESSDERC.2016.7599617},
  researchr = {https://researchr.org/publication/RauMCEGGKLOPRSS16},
  cites = {0},
  citedby = {0},
  pages = {184-187},
  booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-2969-3},
}