TCAD degradation modeling for LDMOS transistors - researchr publication authors

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Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, S. Poli, M.-Y. Chuang, W. Tian, R. Wise. TCAD degradation modeling for LDMOS transistors. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 185-188, IEEE, 2012. [doi]

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