Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors

Jian Ren, Dawei Yan, Wenjie Mou, Yang Zhai, Guofeng Yang, Xiaofeng Gu. Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors. Microelectronics Reliability, 56:34-36, 2016. [doi]

Abstract

Abstract is missing.