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Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis

A. Rodriguez-Fernandez, Carlo Cagli, Luca Perniola, Jordi Suñé, Enrique Miranda 0002. Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. Microelectronics Reliability, 76:178-183, 2017. [doi]

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