Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics - researchr publication

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Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. Microelectronics Reliability, 53(9-11):1456-1460, 2013. [doi]

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