Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectronics Reliability, 64:547-551, 2016. [doi]

Abstract

Abstract is missing.