Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V::t:: Ni-FUSI CMOS transistors

A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, Thierry Conard, Olivier Richard, C. Vrancken, R. Verbeeck, A. Veloso, A. Lauwers, M. de Potter de ten Broeck, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans. Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V::t:: Ni-FUSI CMOS transistors. Microelectronics Reliability, 47(4-5):521-524, 2007. [doi]

Abstract

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