Elemental characterisation of sub 20 nm structures in devices using new SEM-EDS technology

J. T. Sagar, S. R. Burgess, C. McCarthy, X. Li. Elemental characterisation of sub 20 nm structures in devices using new SEM-EDS technology. Microelectronics Reliability, 64:367-369, 2016. [doi]

@article{SagarBML16,
  title = {Elemental characterisation of sub 20 nm structures in devices using new SEM-EDS technology},
  author = {J. T. Sagar and S. R. Burgess and C. McCarthy and X. Li},
  year = {2016},
  doi = {10.1016/j.microrel.2016.07.080},
  url = {http://dx.doi.org/10.1016/j.microrel.2016.07.080},
  researchr = {https://researchr.org/publication/SagarBML16},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {64},
  pages = {367-369},
}