Low-Temperature Atomic Layer Deposition of AlN Using Trimethyl Aluminum and Plasma Excited Ar Diluted Ammonia - researchr publication

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Kentaro Saito, Kazuki Yoshida, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose. Low-Temperature Atomic Layer Deposition of AlN Using Trimethyl Aluminum and Plasma Excited Ar Diluted Ammonia. IEICE Trans. Electron., 105-C(10):596-603, October 2022. [doi]

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