M. Sakalas, P. Sakalas. Design of a wideband, 4 - 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT Technology. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020. pages 1-4, IEEE, 2020. [doi]
@inproceedings{SakalasS20,
title = {Design of a wideband, 4 - 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT Technology},
author = {M. Sakalas and P. Sakalas},
year = {2020},
doi = {10.1109/BCICTS48439.2020.9392907},
url = {https://doi.org/10.1109/BCICTS48439.2020.9392907},
researchr = {https://researchr.org/publication/SakalasS20},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020},
publisher = {IEEE},
isbn = {978-1-7281-9749-4},
}