Noise coupling due to through silicon vias (TSVs) in 3-D integrated circuits

Emre Salman. Noise coupling due to through silicon vias (TSVs) in 3-D integrated circuits. In International Symposium on Circuits and Systems (ISCAS 2011), May 15-19 2011, Rio de Janeiro, Brazil. pages 1411-1414, IEEE, 2011. [doi]

@inproceedings{Salman11,
  title = {Noise coupling due to through silicon vias (TSVs) in 3-D integrated circuits},
  author = {Emre Salman},
  year = {2011},
  doi = {10.1109/ISCAS.2011.5937837},
  url = {http://dx.doi.org/10.1109/ISCAS.2011.5937837},
  researchr = {https://researchr.org/publication/Salman11},
  cites = {0},
  citedby = {0},
  pages = {1411-1414},
  booktitle = {International Symposium on Circuits and Systems (ISCAS 2011), May 15-19 2011, Rio de Janeiro, Brazil},
  publisher = {IEEE},
}