Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures

Toshiyuki Sameshima, Tomokazu Nagao, Erika Sekiguchi, Masahiko Hasumi. Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures. IEEE Access, 8:72598-72606, 2020. [doi]

Abstract

Abstract is missing.