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A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)

Omnia Samy, Hamdy Abdelhamid, Yehea Ismail, Abdelhalim Zekry. A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs). Microelectronics Reliability, 67:82-88, 2016. [doi]

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