Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance - researchr publication authors

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Pablo Sanchis, L. D. Sanchez, P. Castera, A. Rosa, A. M. Gutiérrez, Antoine Brimont, G. Saint-Girons, Régis Orobtchouk, Sébastien Cueff, Pedro Rojo-Romeo, R. Bachelet, P. Regreny, B. Vilquin, C. Dubourdieu, X. Letartre, G. Grenet, J. Penuelas, X. Hu, L. Louahadj, J.-P. Locquet, L. Zimmermann, Chiara Marchiori, S. Abel, Jean Fompeyrine, A. Hakansson. Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance. In 16th International Conference on Transparent Optical Networks, ICTON 2014, Graz, Austria, July 6-10, 2014. pages 1-4, IEEE, 2014. [doi]

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