Pablo Sanchis, L. D. Sanchez, P. Castera, A. Rosa, A. M. Gutiérrez, Antoine Brimont, G. Saint-Girons, Régis Orobtchouk, Sébastien Cueff, Pedro Rojo-Romeo, R. Bachelet, P. Regreny, B. Vilquin, C. Dubourdieu, X. Letartre, G. Grenet, J. Penuelas, X. Hu, L. Louahadj, J.-P. Locquet, L. Zimmermann, Chiara Marchiori, S. Abel, Jean Fompeyrine, A. Hakansson. Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance. In 16th International Conference on Transparent Optical Networks, ICTON 2014, Graz, Austria, July 6-10, 2014. pages 1-4, IEEE, 2014. [doi]
@inproceedings{SanchisSCRGBSOC14,
title = {Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance},
author = {Pablo Sanchis and L. D. Sanchez and P. Castera and A. Rosa and A. M. Gutiérrez and Antoine Brimont and G. Saint-Girons and Régis Orobtchouk and Sébastien Cueff and Pedro Rojo-Romeo and R. Bachelet and P. Regreny and B. Vilquin and C. Dubourdieu and X. Letartre and G. Grenet and J. Penuelas and X. Hu and L. Louahadj and J.-P. Locquet and L. Zimmermann and Chiara Marchiori and S. Abel and Jean Fompeyrine and A. Hakansson},
year = {2014},
doi = {10.1109/ICTON.2014.6876505},
url = {https://doi.org/10.1109/ICTON.2014.6876505},
researchr = {https://researchr.org/publication/SanchisSCRGBSOC14},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {16th International Conference on Transparent Optical Networks, ICTON 2014, Graz, Austria, July 6-10, 2014},
publisher = {IEEE},
}