Guido De Sandre, Luca Bettini, Alessandro Pirola, Lionel Marmonier, Marco Pasotti, Massimo Borghi, Paolo Mattavelli, Paola Zuliani, Luca Scotti, Gianfranco Mastracchio, Ferdinando Bedeschi, Roberto Gastaldi, Roberto Bez. A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 268-269, IEEE, 2010. [doi]
@inproceedings{SandreBPMPBMZSMBGB10,
title = {A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput},
author = {Guido De Sandre and Luca Bettini and Alessandro Pirola and Lionel Marmonier and Marco Pasotti and Massimo Borghi and Paolo Mattavelli and Paola Zuliani and Luca Scotti and Gianfranco Mastracchio and Ferdinando Bedeschi and Roberto Gastaldi and Roberto Bez},
year = {2010},
doi = {10.1109/ISSCC.2010.5433911},
url = {http://dx.doi.org/10.1109/ISSCC.2010.5433911},
researchr = {https://researchr.org/publication/SandreBPMPBMZSMBGB10},
cites = {0},
citedby = {0},
pages = {268-269},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010},
publisher = {IEEE},
isbn = {978-1-4244-6033-5},
}