Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. Microelectronics Reliability, 54(9-10):2147-2150, 2014. [doi]

@article{SantiMMBTWHKWSM14,
  title = {Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage},
  author = {Carlo De Santi and Matteo Meneghini and Michael Marioli and Matteo Buffolo and Nicola Trivellin and T. Weig and K. Holc and K. Köhler and J. Wagner and U. T. Schwarz and Gaudenzio Meneghesso and Enrico Zanoni},
  year = {2014},
  doi = {10.1016/j.microrel.2014.07.073},
  url = {http://dx.doi.org/10.1016/j.microrel.2014.07.073},
  researchr = {https://researchr.org/publication/SantiMMBTWHKWSM14},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {54},
  number = {9-10},
  pages = {2147-2150},
}