A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement

Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi. A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. Microelectronics Reliability, 51(12):2069-2076, 2011. [doi]

Abstract

Abstract is missing.