Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs - researchr publication authors

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Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda. Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Microelectronics Reliability, 81:312-319, 2018. [doi]

This author has not been identified. Look up 'Hajime Sasaki' in GoogleThis author has not been identified. Look up 'Takayuki Hisaka' in GoogleThis author has not been identified. Look up 'Kaoru Kadoiwa' in GoogleThis author has not been identified. Look up 'Tomoki Oku' in GoogleThis author has not been identified. Look up 'Shinobu Onoda' in GoogleThis author has not been identified. Look up 'Takeshi Ohshima' in GoogleThis author has not been identified. Look up 'Eiji Taguchi' in GoogleThis author has not been identified. Look up 'Hidehiro Yasuda' in Google

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