Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda. Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Microelectronics Reliability, 81:312-319, 2018. [doi]
@article{SasakiHKOOOTY18,
title = {Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs},
author = {Hajime Sasaki and Takayuki Hisaka and Kaoru Kadoiwa and Tomoki Oku and Shinobu Onoda and Takeshi Ohshima and Eiji Taguchi and Hidehiro Yasuda},
year = {2018},
doi = {10.1016/j.microrel.2017.10.005},
url = {https://doi.org/10.1016/j.microrel.2017.10.005},
researchr = {https://researchr.org/publication/SasakiHKOOOTY18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {81},
pages = {312-319},
}