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Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai. Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. Microelectronics Reliability, 51(5):879-884, 2011. [doi]

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